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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D082
BRY39 Programmable unijunction transistor/ Silicon controlled switch
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 24
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
FEATURES * Silicon controlled switch * Programmable unijunction transistor. APPLICATIONS * Switching applications such as: - Motor control - Oscillators - Relay replacement - Timers - Pulse shapers, etc.
4 3
kg
MSB028
BRY39
PINNING PIN 1 2 3 4 cathode cathode gate anode gate (connected to case) anode DESCRIPTION
handbook, halfpage
a ag
1
book, halfpage
2
DESCRIPTION Silicon planar PNPN switch or trigger device in a TO-72 metal package. It is an integrated PNP/NPN transistor pair with all electrodes accessible.
k
MGL168
Fig.1 Simplified outline (TO-72) and symbol.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT
Silicon controlled switch
PNP TRANSISTOR
VEBO VCBO IERM Ptot Tj VAK IH ton toff VGA IA Tj Ip
emitter-base voltage
open collector
-70 70 -2.5 275 150 1.4 1 0.25 15
V
NPN TRANSISTOR
collector-base voltage repetitive peak emitter current total power dissipation junction temperature forward on-state voltage holding current turn-on time turn-off time
open emitter Tamb 25 C IA = 50 mA; IAG = 0; RKG-K = 10 k IAG = 10 mA; VBB = -2 V; RKG-K = 10 k
V A mW C V mA s s
Programmable unijunction transistor gate-anode voltage anode current (DC) junction temperature peak point current VS = 10 V; RG = 10 k Tamb 25 C 70 175 150 0.2 V mA C A
1997 Jul 24
2
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Ptot Tstg Tj Tamb VCBO PARAMETER total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS Tamb 25 C - -65 - -65 MIN.
BRY39
MAX. 275 +200 150 +150
UNIT mW C C C
Silicon controlled switch collector-base voltage PNP NPN VCER collector-emitter voltage PNP NPN VCEO collector-emitter voltage PNP NPN VEBO emitter-base voltage PNP NPN IC collector current (DC) PNP NPN ICM peak collector current PNP NPN IE emitter current (DC) PNP NPN IERM repetitive peak emitter current PNP NPN Programmable unijunction transistor VGA IA gate-anode voltage anode current (AV) Tamb 25 C - - 70 175 V mA tp = 10 s; = 0.01 - - 2.5 -2.5 A A - - 175 -175 mA mA note 2 - - - 175 mA note 1 - - - 175 mA open collector - - -70 5 V V open base - - -70 - V V RBE = 10 k - - - 70 V V open emitter - - -70 70 V V
1997 Jul 24
3
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
SYMBOL IARM IASM dIA/dt Notes 1. Provided the IE rating is not exceeded. PARAMETER repetitive peak anode current non-repetitive peak anode current rate of rise of anode current CONDITIONS tp = 10 s; = 0.01 tp = 10 s; Tj = 150 C IA 2.5 A - - - MIN. 3 20
BRY39
MAX. 2.5 A A
UNIT
A/s
2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series resistance of 100 k. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 450 UNIT K/W
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Silicon controlled switch
INDIVIDUAL PNP TRANSISTOR
ICEO IEBO hFE ICER IEBO VCEsat VBEsat hFE Cc Ce fT VAK
collector cut-off current emitter cut-off current DC current gain
IB = 0; VCE = -70 V; Tj = 150 C IC = 0; VEB = -70 V; Tj = 150 C IE = 1 mA; VCE = -5 V VCE = 70 V; RBE = 10 k IC = 0; VEB = 5 V; Tj = 150 C IC = 10 mA; IB = 1 mA IC = 10 mA; IB = 1 mA IC = 10 mA; VCE = 2 V IE = ie = 0; VCB = 20 V IC = ic = 0; VEB = 1 V; f = 1 MHz IC = 10 mA; VCE = 2 V; f = 100 MHz RKG-K = 10 k IA = 50 mA; IAG = 0 IA = 50 mA; IAG = 0; Tj = -55 C IA = 1 mA; IAG = 10 mA
- - 3 - - - - 50 - - 100
-10 -10 15
A A
INDIVIDUAL NPN TRANSISTOR
collector cut-off current emitter cut-off current collector-emitter saturation voltage base-emitter saturation voltage DC current gain collector capacitance emitter capacitance transition frequency
100 10 10 0.5 0.9 - 5 25 -
nA A A V V pF pF MHz
VCE = 70 V; RBE = 10 k; Tj = 150 C -
COMBINED DEVICE
forward on-state voltage
- - - -
1.4 1.9 1.2 1
V V V mA
IH
holding current
VBB = -2 V; IAG = 10 mA; RKG-K = 10 k; see Fig.14
1997 Jul 24
4
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
SYMBOL
SWITCHING TIMES
BRY39
PARAMETER
CONDITIONS VKG-K = -0.5 to 4.5 V; RKG-K = 1 k; see Figs 15 and 16 VKG-K = -0.5 to 0.5 V; RKG-K = 10 k RKG-K = 10 k; see Figs 17 and 18 VS = 10 V; RG = 10 k; see Figs 3 and 8 VS = 10 V; RG = 100 k; see Figs 3 and 8 - - - - - - - - - - - 6 -
MIN.
MAX.
UNIT s s s A A A A V nA nA V V ns
ton
turn-on time
0.25 1.5 15
toff Ip
turn-off time
Programmable unijunction transistor peak point current 0.2 0.06 2 1 - 10 100 1.4 - 80
Iv
valley point current
VS = 10 V; RG = 10 k; see Figs 3 and 8 VS = 10 V; RG = 100 k; see Figs 3 and 8
Voffset IGAO IGKS VAK VOM tr
offset voltage gate-anode leakage current gate-cathode leakage current anode-cathode voltage peak output voltage rise time
typical curve; IA = 0; for VP and VS see Fig.8 IK = 0; VGA = 70 V VAK = 0; VKG = 70 V IA = 100 mA VAA = 20 V; C = 10 nF; see Figs 9 and 11 VAA = 20 V; C = 10 nF; see Fig.11
Explanation of symbols For application of the BRY39 as a programmable unijunction transistor, only the anode gate is used. To simplify the symbols, the term gate instead of anode gate will be used (see Fig.2).
handbook, halfpage
anode a g gate
k cathode
MBB700
Fig.2
Programmable unijunction transistor explanation of symbols.
1997 Jul 24
5
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
BRY39
handbook, halfpage handbook, halfpage
+VB
a IA (1) C 1 nF
g
RG R2 DUT
DUT
k
VS R1
MEA142 MEA141
Fig.3
Programmable unijunction transistor test circuit for peak and valley points.
Fig.4
Programmable unijunction transistor with `program' resistors R1 and R2.
handbook, halfpage
IA
handbook, halfpage
RG = VAK DUT VS =
R1 R2 R1 R2 VB I GAO
DUT
R1 R1 R2
VGA
MBB697 MBB699
Fig.5
Programmable unijunction transistor equivalent test circuit for characteristics testing.
Fig.6
Programmable unijunction transistor equivalent test circuit for gate-anode leakage current.
1997 Jul 24
6
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
BRY39
IA handbook, halfpage
handbook, halfpage
I GKS DUT VGK I(V)
MBB696
I(P) VS V(P) VAK
MEA143
Fig.7
Programmable unijunction transistor equivalent test circuit for gate-cathode leakage current.
Fig.8
Programmable unijunction transistor offset voltage.
handbook, halfpage
handbook, halfpage
VAA
VO VOM
MBB701
90 %
1.5 M DUT
16 k
C 20
VO 27 k 10 % tr time
MBB698
Fig.9
Programmable unijunction transistor test circuit for peak output voltage.
Fig.10 Programmable unijunction transistor peak output voltage.
1997 Jul 24
7
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
BRY39
a (anode) (e2 ) e2 PNP transistor ag (anode gate) (c 1,b 2)
handbook, halfpage
kg (cathode gate) (b1 ,c 2)
b 1,c 2 NPN transistor
P N P
N P N e1
MBB681
c 1,b 2
k (cathode) (e1 )
MBB680
Fig.11 Silicon controlled switch two transistor equivalent circuit.
Fig.12 PNPN silicon controlled switch structure.
handbook, halfpage
a IA IKG IAG ag VAK -IK k
MBB682
handbook, halfpage
IA a RKG-K VBB kg k IAG ag DUT
kg
MBB683
Fig.13 Silicon controlled switch symbol.
Fig.14 Silicon controlled switch equivalent test circuit for holding current.
1997 Jul 24
8
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
BRY39
i handbook, halfpage 4.5
V (V)
MBB687
90 % 2.7 k 16 k RKG-K VI
MBB685
handbook, halfpage
+12 V
VAK +50 V
0 -0.5
10 % time
VAG-K
ton
time
Fig.15 Silicon controlled switch test circuit for turn-on time.
Fig.16 Silicon controlled switch pulse duration increased until dashed curve disappears.
VAK handbook, halfpage (V) +12 handbook, halfpage V 1 k C VAK mercury wetted contact RKG-K 0 tq C < Copt 2.7 k +50 V 16 k 12 C = Copt
MBB686
time
MBB684
- 12
Fig.17 Silicon controlled switch test circuit for turn-on time.
Fig.18 Silicon controlled switch capacitance increased until C = Copt dashed curve disappears.
1997 Jul 24
9
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
BRY39
MBB584
MBB583
handbook, halfpage
1.2
handbook, halfpage
1.8
hFE X 0.8 2V VAG-K = 5 V
h FE X 1.4
0.4
1.0
0 0 50 IAG (mA) 100
0.6 0 50 100 Tamb ( o C) 150
X = value of hFE at IC = 10 mA; VAG-K = 2 V; Tamb = 25 C.
X = value of hFE at IAG = 10 mA; VAG-K = 2 V; Tamb = 25 C.
Fig.19 Silicon controlled switch normalized DC current gain as a function of anode gate current.
Fig.20 Silicon controlled switch normalized DC current gain as a function of ambient temperature.
MBB581
handbook, halfpage
1.2
handbook, halfpage
1.2
MBB587
IH VAK X 1 X 1.1
1
0.8 0.9
0.6 50 0 50 100 150 Tamb ( o C)
0.8 -50
0
50
100 150 Tamb (oC)
X = value of VAK at IA = 1 mA; IAG = 10 mA; VBB = -2 V; C. RKG-K = 10 k; Tamb = 25
X = value of IH at IAG = 10 mA; VBB = -2 V; RKG-K = 10 k; C. Tamb = 25
Fig.21 Silicon controlled switch normalized anode-cathode voltage as a function of ambient temperature.
Fig.22 Silicon controlled switch normalized holding current as a function of ambient temperature.
1997 Jul 24
10
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
BRY39
MBB580
handbook, halfpage
300
P tot (mW) 200
100
0 0 50 150 Tamb ( o C) 150
Fig.23 Silicon controlled switch power derating curve.
10 4 handbook, full pagewidth Z thj-a (K/W) 10 3
MBB582
10
2
10
1 10 5
10 4
10 3
10 2
10 1
1
10
10 2
10 3
t p (s)
10 4
Fig.24 Silicon controlled switch thermal impedance as a function of pulse duration.
1997 Jul 24
11
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
BRY39
handbook, full pagewidth
10
MBB585
IA (A)
= 0.01
0.02 0.05
1
0.1 0.2 0.5
10-1
10-2 10-2 Tamb = 25 C.
10-1
1
10
tp (ms)
102
Fig.25 Silicon controlled switch anode current as a function of pulse duration.
handbook, full pagewidth
10
MBB586
IA (A)
= 0.01
0.02 1 0.05 0.1 0.2 0.5 10-1
10-2 10-2 Tamb = 70 C.
10-1
1
10
tp (ms)
102
Fig.26 Silicon controlled switch anode current as a function of pulse duration.
1997 Jul 24
12
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
PACKAGE OUTLINE Metal-can cylindrical single-ended package; 4 leads
BRY39
SOT18/9
j B
seating plane wM AMBM
1
k
b D1
4 2 3
a A D A L
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.31 4.74 a 2.54 b 0.46 0.42 D 5.45 5.30 D1 4.70 4.55 j 1.05 0.95 k 1.0 0.9 L 14.5 13.5 w 0.36 45
OUTLINE VERSION SOT18/9
REFERENCES IEC B12/C7 type 3 JEDEC TO-72 EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
1997 Jul 24
13
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BRY39
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jul 24
14
Philips Semiconductors
Product specification
Programmable unijunction transistor/ Silicon controlled switch
NOTES
BRY39
1997 Jul 24
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/01/pp16
Date of release: 1997 Jul 24
Document order number:
9397 750 02639

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